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| Ordering number : EN8162A MCH3456 SANYO Semiconductors DATA SHEET MCH3456 Features * * * N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 15 10 1.8 7.2 0.8 150 --55 to +150 Unit V V A A W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=15V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=0.5A, VGS=2.5V ID=0.1A, VGS=1.8V ID=0.1A, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 15 1 10 0.4 1.5 2.6 120 165 230 310 105 30 24 7.8 27 18 22 160 240 350 750 1.3 typ max Unit V A A V S m m m m pF pF pF ns ns ns ns Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Marking : LH Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 12006PE MS IM TB-00002043 / D1504PE TS IM TB-00000382 No.8162-1/4 MCH3456 Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=10V, VGS=4V, ID=1.8A VDS=10V, VGS=4V, ID=1.8A VDS=10V, VGS=4V, ID=1.8A IS=1.8A, VGS=0V Ratings min typ 1.86 0.33 0.55 0.88 1.2 max Unit nC nC nC V Package Dimensions unit : mm 7019A-003 2.0 0.25 0.15 Switching Time Test Circuit VIN 4V 0V VIN 0 to 0.02 PW=10s D.C.1% VDD=10V 3 2.1 1.6 D ID=1A RL=10 VOUT 1 0.25 0.65 2 0.3 G 0.85 P.G 50 S MCH3456 0.07 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 1.6 ID -- VDS 6.0V 4. 0V 2.0 ID -- VGS C Ta= --25 Ta= 75 C 0 0.2 0.4 0.6 0.8 1.0 1.2 V 3.0V 1.8 1.6 Drain Current, ID -- A 2.5 Drain Current, ID -- A 1.2 V 1.4 1.2 1.0 0.8 0.6 0.4 0.8 8.0V 1.5V 2.0 0.4 0.2 0 0.8 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 25 C VGS=1.0V --25 C 1.4 1.6 25 1.8 2.0 IT08578 140 160 IT08580 Drain-to-Source Voltage, VDS -- V 400 IT08577 400 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 350 300 250 350 300 250 0.5A 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 10 I D= 200 150 100 50 0 --60 ID=0.1A 1.0A V =2.5 VGS .5A, 0 I D= =4.0V VGS .0A, I D=1 , VG 0.1A 1.8 S= V --40 --20 0 20 40 60 80 100 120 Gate-to-Source Voltage, VGS -- V IT08579 Ambient Temperature, Ta -- C No.8162-2/4 7 C 5C VDS=10V MCH3456 7 yfs -- ID VDS=10V 3 2 1.0 IS -- VSD VGS=0V Forward Transfer Admittance, yfs -- S 5 3 2 2 C 5 Source Current, IS -- A 7 5 3 2 0.1 7 5 3 2 1.0 7 5 3 2 Ta -25 =- C C 75 Ta= 75 C 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.01 0.4 0.5 0.6 0.7 --25 C 0.8 25 C 0.9 1.0 1.1 IT08582 Drain Current, ID -- A 3 2 IT08581 3 SW Time -- ID Ciss, Coss, Crss -- VDS f=1MHz Diode Forward Voltage, VSD -- V VDD=10V VGS=4V tf td(off) 2 Switching Time, SW Time -- ns 100 5 3 2 10 7 5 3 2 1.0 0.01 10 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0 2 4 6 8 10 12 14 16 Ciss, Coss, Crss -- pF 7 Ciss 100 7 5 td(on) tr 3 2 Coss Crss Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IT08583 2 10 7 5 Drain-to-Source Voltage, VDS -- V IT08584 VGS -- Qg ASO Gate-to-Source Voltage, VGS -- V VDS=10V ID=1.8A Drain Current, ID -- A IDP=7.2A 3 2 1.0 7 5 3 2 0.1 7 5 3 2 <10s 1m 100 s s 10 ID=1.8A m s 10 DC 0m op s er ati on (T a= 25 C Operation in this ) area is limited by RDS(on). 1.8 2.0 0.01 0.01 Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 2 3 5 7 0.1 2 3 5 7 1.0 23 5 7 10 23 IT08695 Total Gate Charge, Qg -- nC 1.0 IT08585 Drain-to-Source Voltage, VDS -- V PD -- Ta Allowable Power Dissipation, PD -- W 0.8 M ou nte do 0.6 na ce ram ic bo 0.4 ard (9 00 mm 2 0.2 !0 .8 mm ) 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT08696 No.8162-3/4 MCH3456 Note on usage : Since the MCH3456 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. PS No.8162-4/4 |
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